Sign In | Join Free | My carsrow.com
China Guangzhou Topfast Technology Co., Ltd. logo
Guangzhou Topfast Technology Co., Ltd.
Best Service, Best PLC China's largest one-stop PLC sourcing centre
Active Member

4 Years

Home > Discrete Semiconductor Devices >

H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor

Guangzhou Topfast Technology Co., Ltd.
Contact Now

H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor

  • 1
  • 2

Brand Name : Infineon Technoctifier Ilogies/International ReOR

Model Number : IHW30N160R2FKSA1

MOQ : 1 piece

Payment Terms : T/T

Delivery Time : 2~8 workdays

Brand : Infineon Technologies/International Rectifier IOR

Certificate : /

Model : IHW30N160R2FKSA1

MOQ : 1 pc

Price : Negotiated

Delivery : 2~8 workdays

Payment : T/T

Contact Now

Product Description

IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series

Applications:
• Inductive Cooking
• Soft Switching Applications

Description:

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant

Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

Part numberIHW30N160R2
Category
Discrete Semiconductor Products
 
Transistors - IGBTs - Single
Series
TrenchStop®
Package
Tube
IGBT Type
NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1600 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
90 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 30A
Power - Max
312 W
Switching Energy
4.37mJ
Input Type
Standard
Gate Charge
94 nC
Td (on/off) @ 25°C
-/525ns
Test Condition
600V, 30A, 10Ohm, 15V
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-1



Product Tags:

H30R1602 Discrete Semiconductor Devices

      

IGBT Power Discrete Semiconductor Devices

      

IHW30N160R2

      
 H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor Manufactures

H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Guangzhou Topfast Technology Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)